s mhop microelectronics c orp. a STS3414 symbolv ds v gs i dm 100 w a p d c 1.25 -55 to 150 i d units parameter 30 4 c/w vv 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 4a 60 @ vgs=4.5v 50 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. sot-23 package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja www.samhop.com.tw jan,16,2009 1 details are subject to change without notice. a t a =25 c n-channel enhancement mode field effect transistor 15 a g d s s ot-23 s g d ver 1.1 75 @ vgs=2.5v
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) 0.5 v g fs 13 s v sd c iss 440 pf c oss 62 pf c rss 37 pf q g 4 nc 8 nc q gs 43 nc q gd t d(on) 9.3 ns t r 1 ns t d(off) 1.4 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =5v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5.0v , i d =4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =3a 45 60 m ohm c f=1.0mhz c v ds =15v,i d =4a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =1.25a 0.82 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ STS3414 www.samhop.com.tw jan,16,2009 2 _ 0.9 1.2 i s maximum continuous drain-source diode forward current 1.25 a 5 v ds =15v,i d =4a,v gs =10v v ds =15v,i d =4a,v gs =4.5v 4.6 nc v gs =10v , i d =4a 37 50 m ohm ver 1.1 b v gs =2.5v , i d =1a m ohm 50 75
STS3414 www.samhop.com.tw jan,16,2009 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 1.20 1.15 1.10 1.05 1.00 0.95 0.90 i d =250ua 15 12 96 3 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j=125 c 25 c -55 c 120 100 80 60 40 20 1 6 12 18 24 30 1 v g s =10v v g s =4.5v 1.75 1.60 1.45 1.30 1.15 1.00 0.00 0 50 100 150 25 75 125 v g s =10v i d =4a v g s =4.5v i d =3a 30 24 18 12 60 0 0.5 1 1.5 2 2.5 3 v g s =10v v g s =2v v g s =2.5v v g s =3v v g s =3.5v v ds =v g s i d =250ua ver 1.1
STS3414 www.samhop.com.tw jan,16,2009 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 20 10 1 0.3 0.6 0.9 1.2 1.5 1.8 25 c 75 c 125 c 120 100 80 60 40 20 0 2 4 6 8 10 0 25 c 125 c 75 c i d =4a 8 10 6 4 20 0 2 4 6 8 10 12 14 16 v ds =15 v i d =4a c is s c os s 500 400 300 200 100 0 c rs s 0 5 10 15 20 25 30 ver 1.1 1 6 10 100 10 100 tr td(off ) tf v ds =5v ,id=1a v g s =10v td(on) 0.1 1 10 30 100 50 10 1 0.1 dc 10m s 1 0 0 ms 1ms 10 0u s r d s ( o n ) l i mit v g s =10v s ingle p uls e t a =25 c
STS3414 www.samhop.com.tw jan,16,2009 5 figure 13. switching test circuit figure 14. switching waveforms square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% p uls e widt h inv e r t e d v dd r d v v r s v g g s in g e n out l 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 ver 1.1
STS3414 www.samhop.com.tw jan,16,2009 6 package outline dimensions sot 23 j 3 / 8 1 3 / 5 1 2 / 5 1 1 / 4 6 1 1 / 5 6 2 / : 1 ! s f g / 2 / 1 1 1 / 2 1 4 / 2 1 3 / 9 1 2 / 7 1 1 / 6 1 1 / 2 1 1 / 6 6 2 / 4 1 1 / 3 1 1 / 2 1 7 1 / 1 : 5 1 / 1 6 6 1 / 1 2 5 1 1 / 1 2 9 1 / 1 4 : 1 / 1 1 5 1 / 2 3 3 1 / 2 2 1 1 / 1 7 4 1 / 1 3 1 1 / 1 1 5 1 / 1 3 3 1 / 1 6 2 1 / 1 1 9 1 / 5 1 1 / 5 6 2 / 2 6 1 / 1 2 7 1 / 1 4 4 1 / 1 5 6 g a f c b l d (typ.) e h m i f g i j l m 1 / 1 8 6 ! s f g / . . 1 2 1 1 2 1 ver 1.1
STS3414 www.samhop.com.tw jan,16,2009 7 sot-23 tape and reel data sot-23 carrier tape sot-23 reel t r feed direction 3.20 2 0.10 3.00 2 0.10 1.33 2 0.10 1.00 +0.25 1.50 +0.10 8.00 +0.30-0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.20 2 0.02 unit: @ package sot-23 a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size g v r w1 n m w s k h ver 1.1
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